Invention Grant
- Patent Title: Memory and method for forming same
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Application No.: US17807769Application Date: 2022-06-20
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Publication No.: US12324141B2Publication Date: 2025-06-03
- Inventor: Juanjuan Huang , Yi Jiang , Weiping Bai , Deyuan Xiao
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202210276127.0 20220321
- Main IPC: H10B12/00
- IPC: H10B12/00

Abstract:
A method for forming a memory includes the following operations: a substrate and a semiconductor layer located on the substrate are formed; the semiconductor layer is patterned to form a plurality of first isolation structures and channel regions, each first isolation structure includes a first through hole and a second through hole, and a first isolation pillar located between the first through hole and the second through hole; a first filling layer filling up the first through hole and the second through hole is formed; the first isolation pillar is removed to form a third through hole located in the first filling layer; a barrier layer filling up the third through hole is formed; the channel regions are exposed by removing the first filling layer; and a gate layer covering surfaces of the channel regions is formed.
Public/Granted literature
- US20230301054A1 MEMORY AND METHOD FOR FORMING SAME Public/Granted day:2023-09-21
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