Invention Grant
- Patent Title: High voltage power supply apparatus and plasma etching equipment having the same
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Application No.: US17901263Application Date: 2022-09-01
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Publication No.: US12327712B2Publication Date: 2025-06-10
- Inventor: Jihwan Kim , Hyunbae Kim , Hongseung Cho , Seungbo Shim , Sungyeol Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2021-0119845 20210908
- Main IPC: B32B41/00
- IPC: B32B41/00 ; H01J37/32 ; H01L21/67

Abstract:
A high voltage power supply apparatus includes a high voltage direct current voltage source, a power switch configured to apply an output of the high voltage direct current voltage source to process equipment, and a sensing circuit unit including a sensor unit including a sensor and at least one operational amplifier, a reference voltage detection unit connected to a node between the sensor and the at least one operational amplifier, and a digital signal processing unit, wherein the sensing circuit unit is connected to an output terminal through which an output of the high voltage direct current voltage source is applied to the process equipment.
Public/Granted literature
- US20230075642A1 HIGH VOLTAGE POWER SUPPLY APPARATUS AND PLASMA ETCHING EQUIPMENT HAVING THE SAME Public/Granted day:2023-03-09
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