Invention Grant
- Patent Title: Optoelectronic device manufacturing method
-
Application No.: US17888852Application Date: 2022-08-16
-
Publication No.: US12329017B2Publication Date: 2025-06-10
- Inventor: François Templier , Roch Espiau de Lamaestre , Tony Maindron
- Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee Address: FR Paris
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR2108773 20210819,FR2111478 20211028
- Main IPC: H10K59/65
- IPC: H10K59/65 ; H10F39/00 ; H10F39/18 ; H10K59/12 ; H10K71/00
Abstract:
An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.
Public/Granted literature
- US20230054679A1 OPTOELECTRONIC DEVICE MANUFACTURING METHOD Public/Granted day:2023-02-23
Information query
