Invention Grant
- Patent Title: Adaptive wordline refresh
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Application No.: US17656801Application Date: 2022-03-28
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Publication No.: US12334131B2Publication Date: 2025-06-17
- Inventor: Yang Lu , Kang-Yong Kim
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Colby Nipper PLLC
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/4076 ; G11C11/408

Abstract:
Described apparatuses and methods relate to adaptive wordline refresh for a memory system that may support a nondeterministic protocol. To help manage power delivery networks in a memory system, a memory device can include logic that can stagger activation of multiple wordlines that are to be activated or refreshed approximately simultaneously. The logic circuitry can be coupled between wordlines that are to be activated and delay propagation of the activation signal. Thus, a first group of wordlines (e.g., “before” the logic circuitry) are activated by the signal, but activation of a second group of wordlines (e.g., “after” the logic circuitry), is delayed, reducing the peak current draw. Additional logic circuitries can be coupled between the wordlines to divide the wordlines into multiple groups, thereby staggering the activation of wordlines that are activated by a refresh command, which can reduce the peak current draw and power consumption.
Public/Granted literature
- US20230307030A1 Adaptive Wordline Refresh Public/Granted day:2023-09-28
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