Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
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Application No.: US17574245Application Date: 2022-01-12
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Publication No.: US12334336B2Publication Date: 2025-06-17
- Inventor: Yoshitomo Hashimoto , Katsuyoshi Harada
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP2021-005886 20210118
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/52

Abstract:
There is provided a technique that includes forming a film in a concave portion provided on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming an adsorption inhibition layer by supplying an adsorption inhibitor, which inhibits adsorption of a precursor, to the substrate and adsorbing the adsorption inhibitor on adsorption sites of an upper portion in the concave portion; (b) forming a first layer by supplying the precursor to the substrate and adsorbing the precursor on adsorption sites existing in the concave portion in which the adsorption inhibition layer is formed; and (c) modifying the adsorption inhibition layer and the first layer into a second layer by supplying a first reactant, which chemically reacts with both the adsorption inhibition layer and the first layer, to the substrate.
Public/Granted literature
Information query
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