Invention Grant
- Patent Title: Dynamic random access memory device with active regions of different profile roughness and method for forming the same
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Application No.: US17386575Application Date: 2021-07-28
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Publication No.: US12334345B2Publication Date: 2025-06-17
- Inventor: Yaoguang Xu , Hsien-Shih Chu , Yun-Fan Chou , Yu-Cheng Tung , Chaoxiong Wang
- Applicant: Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: CN Quanzhou
- Assignee: Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: CN Quanzhou
- Agent Winston Hsu
- Priority: CN202110587180.8 20210527,CN202121165979.X 20210527
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H10B12/00

Abstract:
A DRAM includes a substrate, a plurality of first active regions disposed on the substrate and arranged end-to-end along the first direction, and a plurality of second active regions disposed between the first active regions and arranged end-to-end along the first direction. The second active regions respectively have a first sidewall adjacent to a first trench between the second active region and one of the first active regions and a second sidewall adjacent to a second trench between the ends of the first active regions, wherein the second sidewall is taper than the first sidewall in a cross-sectional view.
Public/Granted literature
- US20220384191A1 DYNAMIC RANDOM ACCESS MEMORY AND METHOD FOR FORMING THE SAME Public/Granted day:2022-12-01
Information query
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