Multi-height interconnect trenches for resistance and capacitance optimization
Abstract:
Embodiments disclosed herein include interconnect layers that include non-uniform interconnect heights and methods of forming such devices. In an embodiment, an interconnect layer comprises an interlayer dielectric (ILD), a first interconnect disposed in the ILD, wherein the first interconnect has a first height, and a second interconnect disposed in the ILD, wherein the second interconnect has a second height that is different than the first height.
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