Invention Grant
- Patent Title: Integrated circuits
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Application No.: US17969694Application Date: 2022-10-20
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Publication No.: US12334459B2Publication Date: 2025-06-17
- Inventor: Hsien-Wei Chen , Ming-Fa Chen , Sung-Feng Yeh , Ying-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/768 ; H01L23/00 ; H01L23/48
Abstract:
An integrated circuit includes a conductive pad. In some embodiments, the conductive pad includes at least one dielectric pattern therein, wherein the at least one dielectric pattern penetrates a surface of the conductive pad. In some embodiments, the conductive pad includes a conductive main body and at least one hole in the conductive main body, wherein the at least one hole penetrates a surface of the conductive main body.
Public/Granted literature
- US20230040077A1 INTEGRATED CIRCUITS Public/Granted day:2023-02-09
Information query
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