Invention Grant
- Patent Title: Semiconductor die having a sodium stopper in an insulation layer groove and method of manufacturing the same
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Application No.: US18327112Application Date: 2023-06-01
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Publication No.: US12336255B2Publication Date: 2025-06-17
- Inventor: Oliver Blank , Christof Altstätter , Ingmar Neumann
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP20155344 20200204
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/765 ; H01L23/00 ; H10D30/66 ; H10D64/00

Abstract:
The application relates to a semiconductor die having a semiconductor body including an active region, an insulation layer on the semiconductor body, and a sodium stopper formed in the insulation layer. The sodium stopper is arranged in an insulation layer groove which intersects the insulation layer vertically and extends around the active region. The sodium stopper is formed of a tungsten material that at least partly fills the insulation layer groove. Both the insulation layer groove and the tungsten material extend into the semiconductor body.
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