Invention Grant
- Patent Title: SPAD structure
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Application No.: US17819572Application Date: 2022-08-12
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Publication No.: US12336306B2Publication Date: 2025-06-17
- Inventor: Ju Hwan Jung , Young Hwan Hyeon , Jong Man Kim , Byoung Soo Choi
- Applicant: DB HITek Co., Ltd.
- Applicant Address: KR Bucheon-si
- Assignee: DB HITek Co., Ltd.
- Current Assignee: DB HITek Co., Ltd.
- Current Assignee Address: KR Bucheon-si
- Agency: Central California IP Group, P.C.
- Agent Andrew D. Fortney
- Priority: KR10-2021-0115550 20210831
- Main IPC: H10F30/225
- IPC: H10F30/225 ; H10F39/00
Abstract:
Provided is a single-photon avalanche diode (SPAD) structure. More particularly, provided is a SPAD structure having an isolation structure for electrical and/or physical separation between a pixel area and a logic area.
Public/Granted literature
- US20230066769A1 SPAD STRUCTURE Public/Granted day:2023-03-02
Information query
