Invention Grant
- Patent Title: Selective per die DRAM PPR for memory device
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Application No.: US18169635Application Date: 2023-02-15
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Publication No.: US12340861B2Publication Date: 2025-06-24
- Inventor: Amitava Majumdar , Greg S. Hendrix , Anandhavel Nagendrakumar , Krunal Patel , Kirthi Shenoy , Danilo Caraccio , Ankush Lal , Frank F. Ross , Adam D. Gailey
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C29/52
- IPC: G11C29/52 ; G06F11/10 ; G11C29/00

Abstract:
In a compute express link (CXL) memory controller system, a system and method to identify memory errors which may require soft package repair or hard package repair to rows of DRAM memory. When data is written to a row of DRAM, the data is immediately and automatically read back and scanned for bit errors. If bit errors are identified, steps are taken to determine if the memory location requires no repair, soft repair, or hard repair. The data is corrected and written back to a new memory location which is memory-mapped to the original location, thus effecting the soft- or hard-repair. The present system and method does not repair the entire row of memory, but only repairs the specific die(s) that exhibit memory error in the row.
Public/Granted literature
- US20240096439A1 SELECTIVE PER DIE DRAM PPR FOR CXL TYPE 3 DEVICE Public/Granted day:2024-03-21
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