- Patent Title: Ruthenium-based sputtering target and method for manufacturing same
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Application No.: US17609356Application Date: 2020-06-10
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Publication No.: US12340995B2Publication Date: 2025-06-24
- Inventor: Tomohiro Maruko , Hitoshi Arakawa , Shohei Otomo , Yu Suzuki
- Applicant: FURUYA METAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: FURUYA METAL CO., LTD.
- Current Assignee: FURUYA METAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Ohlandt, Greeley and Perle, L.L.P.
- Priority: JP2019-122996 20190701
- International Application: PCT/JP2020/022829 WO 20200610
- International Announcement: WO2021/002167 WO 20210107
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/14 ; C23C14/34
Abstract:
A ruthenium-based sputtering target having a cast structure, in which a sputter surface of the sputtering target includes at least two or more types of regions, and crystal surfaces in the regions are different from each other, each of the crystal surfaces being specified by a main peak of X-ray diffraction.
Public/Granted literature
- US20220319824A1 RUTHENIUM-BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME Public/Granted day:2022-10-06
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