Invention Grant
- Patent Title: Method for manufacturing semiconductor device including resin layers
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Application No.: US17684137Application Date: 2022-03-01
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Publication No.: US12341024B2Publication Date: 2025-06-24
- Inventor: Eiji Takano
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2021-142606 20210901
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/463 ; H01L21/56 ; H01L21/683 ; H01L23/31 ; H01L25/065

Abstract:
According to one embodiment, a method for manufacturing a semiconductor device includes placing a semiconductor chip on a first surface of a support substrate, forming a first resin layer covering the semiconductor chip on the first surface, and forming a second resin layer on a second surface of the support substrate. The second surface is opposite the first surface. In some examples, the second resin layer can be formed to counteract or mitigate warpage of the support substrate that might otherwise result from use of the first resin layer.
Public/Granted literature
- US20230063204A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2023-03-02
Information query
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