Invention Grant
- Patent Title: Tunnel diode-based backscattering RFID system
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Application No.: US17908639Application Date: 2021-03-08
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Publication No.: US12341238B2Publication Date: 2025-06-24
- Inventor: Aline Eid , Jimmy Georges Donald Hester , Emmanouil Tentzeris
- Applicant: Georgia Tech Research Corporation
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Troutman Pepper Locke LLP
- Agent Ryan A. Schneider; Stephanie J. Remy
- International Application: PCT/US2021/021343 WO 20210308
- International Announcement: WO2021/236203 WO 20211125
- Main IPC: H01Q1/24
- IPC: H01Q1/24 ; G06K19/07

Abstract:
An exemplary embodiment of the present disclosure provides a backscattering RFID system comprising: a combined oscillator and reflection amplifier circuit comprising a first tunnel diode having an anode and a cathode; and a biasing circuit in communication with the anode and configured to bias the first tunnel diode in a negative differential resistance region; wherein the combined oscillator and reflection amplifier circuit is configured to modulate a RF interrogation signal to produce a backscatter signal.
Public/Granted literature
- US20230093926A1 Tunnel Diode-Based Backscattering RFID System Public/Granted day:2023-03-30
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