Invention Grant
- Patent Title: Optical semiconductor chip
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Application No.: US17915281Application Date: 2020-04-17
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Publication No.: US12341315B2Publication Date: 2025-06-24
- Inventor: Shigeru Kanazawa , Yuta Ueda , Takahiko Shindo , Meishin Chin
- Applicant: Nippon Telegraph and Telephone Corporation
- Applicant Address: JP Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JP Tokyo
- Agency: Workman Nydegger
- International Application: PCT/JP2020/016937 WO 20200417
- International Announcement: WO2021/210177 WO 20211021
- Main IPC: G02F1/01
- IPC: G02F1/01 ; G02F1/015 ; G02F1/025 ; H01S5/00 ; H01S5/12

Abstract:
An optical semiconductor chip of the present disclosure includes a high frequency line between an electrode pad receiving a modulation signal and a modulation electrode on the optical waveguide having a light absorption layer. The depletion layer capacitance generated in the light absorption layer is canceled by an inductor component of the high frequency line. When a portion directly below the high frequency line is embedded with a low-dielectric-constant material or is made hollow, the parasitic capacitance is further reduced. The high frequency line may have a zigzag shape as well as a linear shape. The electrode pad on the optical semiconductor chip can be connected to other substrates including RF lines for modulation signal input by bumps or wire bonding.
Public/Granted literature
- US20230139615A1 Optical Semiconductor Chip Public/Granted day:2023-05-04
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