Invention Grant
- Patent Title: Spatial phase integrated wafer-level imaging
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Application No.: US17527799Application Date: 2021-11-16
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Publication No.: US12342648B2Publication Date: 2025-06-24
- Inventor: Blair Barbour , David Theodore Truch , Nicholas Englert
- Applicant: Photon-X, Inc.
- Applicant Address: US FL Kissimmee
- Assignee: Photon-X, Inc.
- Current Assignee: Photon-X, Inc.
- Current Assignee Address: US FL Kissimmee
- Agency: Henry Patent Law Firm PLLC
- Main IPC: H10F39/00
- IPC: H10F39/00 ; H04N25/702 ; H04N25/75 ; H10D99/00 ; H10F39/18 ; H10F77/40 ; H10K39/32 ; H10F39/12

Abstract:
In a general aspect, integrated spatial phase wafer-level imaging is described. In some aspects, an integrated imaging system an integrated image sensor and an edge processor. The integrated image sensor may include: a polarizer pixel configured to filter electromagnetic (EM) radiation and to allow filtered EM radiation having a selected polarization state to pass therethrough; a radiation-sensing pixel configured to detect the filtered EM radiation and to generate a signal in response to detecting the filtered EM radiation; and readout circuitry configured to perform analog preprocessing on the signal generated by the radiation-sensing pixel. The edge processor may be configured to: generate first-order primitives and second-order primitives based on the analog preprocessed signal from the readout circuitry; and determine a plurality of features of an object located in a field-of-view of the radiation-sensing pixel based on the first-order primitives and the second-order primitives.
Public/Granted literature
- US20220336511A1 Spatial Phase Integrated Wafer-Level Imaging Public/Granted day:2022-10-20
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