- Patent Title: N-type SNS thin film, photoelectric conversion element, solar cell, method for manufacturing n-type SNS thin film, and manufacturing apparatus of n-type SNS thin film
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Application No.: US18010599Application Date: 2021-05-06
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Publication No.: US12342655B2Publication Date: 2025-06-24
- Inventor: Issei Suzuki , Sakiko Kawanishi , Hiroshi Yanagi
- Applicant: TOHOKU UNIVERSITY , UNIVERSITY OF YAMANASHI
- Applicant Address: JP Sendai; JP Kofu
- Assignee: TOHOKU UNIVERSITY,UNIVERSITY OF YAMANASHI
- Current Assignee: TOHOKU UNIVERSITY,UNIVERSITY OF YAMANASHI
- Current Assignee Address: JP Sendai; JP Kofu
- Agency: Troutman Pepper Locke, LLP
- Agent Tim Tingkang Xia, Esq.
- Priority: JP2020-108143 20200623
- International Application: PCT/JP2021/017400 WO 20210506
- International Announcement: WO2021/261089 WO 20211230
- Main IPC: H10F77/12
- IPC: H10F77/12 ; H10F10/14 ; H01L21/02 ; H10F71/00
Abstract:
This n-type SnS thin-film has n-type conductivity, an average thickness thereof is 0.100 μm to 10 μm, a ratio (α1.1/α1.6) of an absorption coefficient α1.1 at a photon energy of 1.1 eV to an absorption coefficient α1.6 at a photon energy of 1.6 eV is 0.200 or less, an atomic ratio of an S content to an Sn content is 0.85 to 1.10.
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