Invention Application
US20020068430A1 Methods of forming void regions, dielectric regions and capacitor constructions 失效
形成空隙区域,电介质区域和电容器结构的方法

  • Patent Title: Methods of forming void regions, dielectric regions and capacitor constructions
  • Patent Title (中): 形成空隙区域,电介质区域和电容器结构的方法
  • Application No.: US10044206
    Application Date: 2002-01-11
  • Publication No.: US20020068430A1
    Publication Date: 2002-06-06
  • Inventor: Jerome Michael Eldridge
  • Main IPC: H01L021/76
  • IPC: H01L021/76 H01L021/331
Methods of forming void regions, dielectric regions and capacitor constructions
Abstract:
In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c) subjecting the mass to hydrogen to convert a component of the mass to a volatile form; and d) volatilizing the volatile form of the component from the mass to leave a void region associated with the substrate. In another aspect, the invention includes a method of forming a capacitor construction, comprising: a) forming a first capacitor electrode over a substrate; b) forming a sacrificial material proximate the first capacitor electrode; c) forming a second capacitor electrode proximate the sacrificial material, the second capacitor electrode being separated from the first capacitor electrode by the sacrificial material, at least one of the first and second electrodes being a metal-comprising layer; and d) subjecting the sacrificial material to conditions which transport a component from the sacrificial material to the metal-comprising layer, the transported component leaving a void region between the first and second capacitor electrodes.
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