Invention Application
- Patent Title: Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former
- Patent Title (中): 用于电子束检查的装置,其操作方法以及使用前者制造半导体器件的方法
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Application No.: US09985324Application Date: 2001-11-02
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Publication No.: US20020148975A1Publication Date: 2002-10-17
- Inventor: Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
- Priority: JP2234/2001 20010110; JP31906/2001 20010208; JP31901/2001 20010208; JP33599/2001 20010209; JP37212/2001 20010214; JP73374/2001 20010315; JP89107/2001 20010327; JP114999/2001 20010413; JP124244/2001 20010423; JP158662/2001 20010528; JP184733/2001 20010619; JP367082/2000 20001201; JP371078/2000 20001206
- Main IPC: G21G005/00
- IPC: G21G005/00

Abstract:
A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate nullSnull to be inspected into an inspection chamber 23-1 maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
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