Invention Application
US20020176289A1 Method of erasing a FAMOS memory cell and a corresponding memory cell
有权
擦除FAMOS存储单元和相应存储单元的方法
- Patent Title: Method of erasing a FAMOS memory cell and a corresponding memory cell
- Patent Title (中): 擦除FAMOS存储单元和相应存储单元的方法
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Application No.: US10117446Application Date: 2002-04-03
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Publication No.: US20020176289A1Publication Date: 2002-11-28
- Inventor: Richard Fournel , Cyrille Dray , Daniel Caspar
- Applicant: STMicroelectronics S.A.
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Priority: FR0104621 20010405
- Main IPC: G11C007/00
- IPC: G11C007/00
Abstract:
A FAMOS memory cell is electrically erased. The FAMOS memory cell may be electrically erased by applying to the substrate a voltage having a value at least 4 volts higher than the lower of a voltage applied to the source and a voltage applied to the drain. The voltage applied to the substrate is also less than a predetermined limit above which the memory cell is destroyed.
Public/Granted literature
- US06667909B2 Method of erasing a FAMOS memory cell and a corresponding memory cell Public/Granted day:2003-12-23
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