A method of producing smooth sidewalls on a micromachined device is described. A portion of the wafer is dry etched, forming a dry etched sidewall. The sidewall is covered with a mask. An area adjacent to the dry etched area is wet etched, forming a wet etched sidewall. The mask may optionally be removed after wet etching. The wafer substrate has a orientation, which allows the wet etched area to have nearly vertical wet etched sidewalls.