Invention Application
- Patent Title: Large area electron source
- Patent Title (中): 大面积电子源
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Application No.: US10262997Application Date: 2002-10-02
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Publication No.: US20030062488A1Publication Date: 2003-04-03
- Inventor: Richard Lee Fink , Leif H. Thuesen
- Main IPC: H01J033/00
- IPC: H01J033/00

Abstract:
By using a large area cathode, an electron source can be made that can irradiate a large area more uniformly and more efficiently than currently available devices. The electron emitter can be a carbon film cold cathode, a microtip or some other emitter. It can be patterned. The cathode can be assembled with electrodes for scanning the electron source.
Public/Granted literature
- US06750461B2 Large area electron source Public/Granted day:2004-06-15
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