Invention Application
- Patent Title: Etch process for etching microstructures
- Patent Title (中): 用于蚀刻微结构的蚀刻工艺
-
Application No.: US10265598Application Date: 2002-10-08
-
Publication No.: US20030071015A1Publication Date: 2003-04-17
- Inventor: Jeffrey D. Chinn , Sofiane Soukane
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: null
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: null
- Main IPC: C03C015/00
- IPC: C03C015/00

Abstract:
A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.
Public/Granted literature
- US06936183B2 Etch process for etching microstructures Public/Granted day:2005-08-30
Information query