Invention Application
- Patent Title: Micro inertia sensor and method of manufacturing the same
- Patent Title (中): 微惯性传感器及其制造方法
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Application No.: US10330710Application Date: 2002-12-27
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Publication No.: US20030183009A1Publication Date: 2003-10-02
- Inventor: Seung Do An , Kyoung Soo Kim , Ji Man Cho
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Kyungki-Do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Kyungki-Do
- Priority: KR2002-16603 20020327
- Main IPC: B32B003/10
- IPC: B32B003/10 ; G01P015/00

Abstract:
The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.
Public/Granted literature
- US06789423B2 Micro inertia sensor and method of manufacturing the same Public/Granted day:2004-09-14
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