Invention Application
- Patent Title: MULTI-RESISTIVE STATE MATERIAL THAT USES DOPANTS
- Patent Title (中): 使用DOPANTS的多电阻状态材料
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Application No.: US10604606Application Date: 2003-08-04
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Publication No.: US20040161888A1Publication Date: 2004-08-19
- Inventor: Darrell Rinerson , Wayne Kinney , Christophe J. Chevallier , Steven W. Longcor , Edmond R. Ward , Steve Kuo-Ren Hsia
- Applicant: UNITY SEMICONDUCTOR CORPORATION
- Applicant Address: US CA Sunnyvale
- Assignee: UNITY SEMICONDUCTOR CORPORATION
- Current Assignee: UNITY SEMICONDUCTOR CORPORATION
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L021/00
- IPC: H01L021/00 ; H01L021/8238 ; H01L021/20
Abstract:
A multi-resistive state material that uses dopants is provided. A multi-resistive state material can be used in a memory cell to store information. However, a multi-resistive state material may not have electrical properties that are appropriate for a memory device. Intentionally doping a multi-resistive state material to modify the electrical properties can, therefore, be desirable.
Public/Granted literature
- US07071008B2 Multi-resistive state material that uses dopants Public/Granted day:2006-07-04
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