Invention Application
- Patent Title: Electron emitter
- Patent Title (中): 电子发射体
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Application No.: US10678958Application Date: 2003-10-03
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Publication No.: US20050073232A1Publication Date: 2005-04-07
- Inventor: Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada
- Applicant: Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada
- Applicant Address: JP Nagoya-City
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya-City
- Priority: JPNO.2003-345992 20031003
- Main IPC: G09G3/22
- IPC: G09G3/22 ; H01J1/312 ; H01J31/12 ; H01J1/05

Abstract:
An electron emitter includes an emitter element made of a dielectric material, and an upper electrode and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode for emitting electrons from the emitter element. The upper electrode is formed on an upper surface of the emitter element, and the lower electrode is formed on a lower surface of the emitter element. The emitter element is exposed through a plurality of through regions of the upper electrode. Peripheral surfaces around the through regions facing the emitter element are spaced from the emitter element.
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