Invention Application
US20050202350A1 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
有权
使用光刻印刷法制造双镶嵌结构的方法，用于制造用于双镶嵌结构的压印光刻模具的方法，用于可压印电介质的材料和用于双重镶嵌图案中的光刻印刷光刻设备
- Patent Title: Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
- Patent Title (中): 使用光刻印刷法制造双镶嵌结构的方法，用于制造用于双镶嵌结构的压印光刻模具的方法，用于可压印电介质的材料和用于双重镶嵌图案中的光刻印刷光刻设备
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Application No.: US10799282Application Date: 2004-03-13
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Publication No.: US20050202350A1Publication Date: 2005-09-15
- Inventor: Matthew Colburn , Kenneth Carter , Gary McClelland , Dirk Pfeiffer
- Applicant: Matthew Colburn , Kenneth Carter , Gary McClelland , Dirk Pfeiffer
- Main IPC: B29C33/38
- IPC: B29C33/38 ; G03F7/00 ; H01L21/768
Abstract:
The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
Public/Granted literature
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