Invention Application
- Patent Title: Thin film bulk acoustic resonator with a mass loaded perimeter
- Patent Title (中): 具有质量负载周长的薄膜体声波谐振器
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Application No.: US10990201Application Date: 2004-11-15
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Publication No.: US20060103492A1Publication Date: 2006-05-18
- Inventor: Hongjun Feng , R. Fazzio , Richard Ruby , Paul Bradley
- Applicant: Hongjun Feng , R. Fazzio , Richard Ruby , Paul Bradley
- Main IPC: H03H9/54
- IPC: H03H9/54
Abstract:
A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).
Public/Granted literature
- US07280007B2 Thin film bulk acoustic resonator with a mass loaded perimeter Public/Granted day:2007-10-09
Information query
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