Invention Application
- Patent Title: Pattern defect inspection method and apparatus thereof
- Patent Title (中): 图案缺陷检查方法及其装置
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Application No.: US11449650Application Date: 2006-06-09
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Publication No.: US20070085005A1Publication Date: 2007-04-19
- Inventor: Masaki Hasegawa , Hiroshi Makino , Hikaru Koyama , Zhaohui Cheng , Hisaya Murakoshi
- Applicant: Masaki Hasegawa , Hiroshi Makino , Hikaru Koyama , Zhaohui Cheng , Hisaya Murakoshi
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Priority: JP2005-174491 20050615
- Main IPC: G21K7/00
- IPC: G21K7/00

Abstract:
In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
Public/Granted literature
- US07547884B2 Pattern defect inspection method and apparatus thereof Public/Granted day:2009-06-16
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