INTEGRATED CIRCUIT SWITCHES, DESIGN STRUCTURE AND METHODS OF FABRICATING THE SAME

Invention Application

US20110049649A1 INTEGRATED CIRCUIT SWITCHES, DESIGN STRUCTURE AND METHODS OF FABRICATING THE SAME 有权

Title translation: 集成电路开关，设计结构及其制作方法

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Patent Title: INTEGRATED CIRCUIT SWITCHES, DESIGN STRUCTURE AND METHODS OF FABRICATING THE SAME
Patent Title (中): 集成电路开关，设计结构及其制作方法
Application No.: US12548697

Application Date: 2009-08-27
Publication No.: US20110049649A1

Publication Date: 2011-03-03
Inventor: Felix P. ANDERSON , Thomas L. McDEVITT , Anthony K. STAMPER
Applicant: Felix P. ANDERSON , Thomas L. McDEVITT , Anthony K. STAMPER
Applicant Address: US NY Armonk
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee Address: US NY Armonk
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L21/306 ; H01L29/84 ; G06F17/50

INTEGRATED CIRCUIT SWITCHES, DESIGN STRUCTURE AND METHODS OF FABRICATING THE SAME

Abstract:

Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material.

Abstract(Chinese):

提供集成的MEMS开关，设计结构和制造这种开关的方法。该方法包括在嵌入在牺牲材料中的开关装置的侧面上形成牺牲材料的至少一个突片。该方法还包括通过形成在开关装置侧面上的至少一个突片上的至少一个开口剥离牺牲材料，并用封盖材料密封至少一个开口。

Public/Granted literature

US08569091B2 Integrated circuit switches, design structure and methods of fabricating the same Public/Granted day:2013-10-29

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀