Invention Application
- Patent Title: ELECTROLUMINESCENT DIODE SENSOR
- Patent Title (中): 电致发光二极管传感器
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Application No.: US12961675Application Date: 2010-12-07
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Publication No.: US20120142112A1Publication Date: 2012-06-07
- Inventor: Vincent P. Schnee
- Applicant: Vincent P. Schnee
- Applicant Address: US VA Fort Belvoir
- Assignee: United States of America, as represented by the Secretary of the Army
- Current Assignee: United States of America, as represented by the Secretary of the Army
- Current Assignee Address: US VA Fort Belvoir
- Main IPC: G01N33/00
- IPC: G01N33/00 ; G01N23/00 ; G01N21/76

Abstract:
A senor uses a transduction mechanism of attenuating electroluminescence. Luminescence from a light emitting diode is attenuated as a consequence of direct interaction of an analyte and a electroluminescent material, An electroluminescent diode sensor (EDS) is fabricated in a way that allows the electroluminescent material in the diode to be exposed to gaseous, liquid or solid sample(s) which may affect the luminescence intensity of the diode,
Public/Granted literature
- US08435797B2 Electroluminescent diode sensor Public/Granted day:2013-05-07
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