Invention Application
- Patent Title: Method of Manufacturing a Semiconductor Device Having a Porous, Low-K Dielectric Layer
- Patent Title (中): 制造具有多孔低K电介质层的半导体器件的方法
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Application No.: US13242031Application Date: 2011-09-23
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Publication No.: US20120178253A1Publication Date: 2012-07-12
- Inventor: Sang-Hoon Ahn , Kyu-Hee Han , Kyoung-Hee Kim , Gil-Heyun Choi , Byung-Hee Kim , Sang-Don Nam
- Applicant: Sang-Hoon Ahn , Kyu-Hee Han , Kyoung-Hee Kim , Gil-Heyun Choi , Byung-Hee Kim , Sang-Don Nam
- Priority: KR10-2011-0002407 20110110
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/31
Abstract:
The inventive concept provides porous, low-k dielectric materials and methods of manufacturing and using the same. In some embodiments, porous, low-k dielectric materials are manufactured by forming a porogen-containing dielectric layer on a substrate and then removing at least a portion of said porogen from the layer.
Public/Granted literature
- US09224593B2 Method of manufacturing a semiconductor device having a porous, low-k dielectric layer Public/Granted day:2015-12-29
Information query
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