A method of forming a fine pattern and a method of manufacturing a semiconductor device. The method of forming a fine pattern includes: forming a hard mask layer on a to-be-etched layer; forming on the hard mask layer a first mask pattern including a plurality of elongated openings that are arranged at predetermined intervals in a first direction and a second direction different from the first direction and are offset from each other in adjacent columns in the second direction; forming on the hard mask layer a second mask pattern including at least two linear openings that each pass through the elongated openings in the adjacent columns and extend in the first direction; forming a hard mask pattern by etching the hard mask layer by using the second mask pattern as an etch mask; and etching the to-be-etched layer by using the hard mask pattern.