Invention Application
- Patent Title: INVERTER, NAND GATE, AND NOR GATE
- Patent Title (中): 逆变器,NAND门和NOR门
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Application No.: US14049800Application Date: 2013-10-09
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Publication No.: US20140035621A1Publication Date: 2014-02-06
- Inventor: Sang Hee PARK , Chi Sun HWANG , Sung MIN Yoon , Him Chan OH , Kee Chan PARK , Tao REN , Hong Kyun LEEM , Min Woo OH , Ji Sun KIM , Jae Eun PI , Byeong Hoon KIM , Byoung Gon YU
- Applicant: Konkuk University Industrial Cooperation Corp , ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Seoul KR Daejeon
- Assignee: Konkuk University Industrial Cooperation Corp,ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: Konkuk University Industrial Cooperation Corp,ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Seoul KR Daejeon
- Priority: KR10-2011-0026428 20110324; KR10-2011-0085561 20110826
- Main IPC: H03K3/012
- IPC: H03K3/012

Abstract:
Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.
Public/Granted literature
- US09099991B2 Inverter, NAND gate, and NOR gate Public/Granted day:2015-08-04
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