Invention Application
US20140127895A1 Semiconductor Device Comprising a Fuse Structure and a Method for Manufacturing such Semiconductor Device
审中-公开
包含熔丝结构的半导体器件和制造这种半导体器件的方法
- Patent Title: Semiconductor Device Comprising a Fuse Structure and a Method for Manufacturing such Semiconductor Device
- Patent Title (中): 包含熔丝结构的半导体器件和制造这种半导体器件的方法
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Application No.: US14153322Application Date: 2014-01-13
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Publication No.: US20140127895A1Publication Date: 2014-05-08
- Inventor: Gabriele Bettineschi , Uwe Seidel , Wolfgang Walter , Michael Schrenk , Hubert Werthmann
- Applicant: INFINEON TECHNOLOGIES AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.
Public/Granted literature
- US09165828B2 Semiconductor device comprising a fuse structure and a method for manufacturing such semiconductor device Public/Granted day:2015-10-20
Information query
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