An acceleration sensor can ensure rigidity of its movable electrode despite a large number of through-holes formed in the movable electrode. The acceleration sensor has an SOI substrate in which a silicon oxide layer is formed on a silicon support layer and an active silicon layer is formed on the silicon oxide layer, wherein the active silicon layer of the SOI substrate has a movable electrode supported by elastic beams and configured with a weight, and also has fixed electrodes disposed in a fixed manner around the movable electrode to face the movable electrode, and wherein through-holes penetrating in a Z-axis direction are formed over the entire surface on the inner side of an outer circumference to which the elastic beams of the movable electrode are connected.