Invention Application
US20150132871A1 OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING OXIDE SEMICONDUCTOR DEVICES, DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES
有权
氧化物半导体器件，制造氧化物半导体器件的方法，具有氧化物半导体器件的显示器件，制造具有氧化物半导体器件的显示器件的方法
- Patent Title: OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING OXIDE SEMICONDUCTOR DEVICES, DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES
- Patent Title (中): 氧化物半导体器件，制造氧化物半导体器件的方法，具有氧化物半导体器件的显示器件，制造具有氧化物半导体器件的显示器件的方法
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Application No.: US14533009Application Date: 2014-11-04
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Publication No.: US20150132871A1Publication Date: 2015-05-14
- Inventor: Seong-Min Wang , Ki-Wan Ahn , Joo-Sun Yoon , Ki-Hong Kim
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Priority: KR10-2011-0046116 20110517
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/44 ; H01L21/467 ; H01L21/477 ; H01L29/786 ; H01L29/66
Abstract:
An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.
Public/Granted literature
Information query
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