A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the semiconductor element substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the semiconductor element substrate relatively moves with respect to an injection area of an injection particle by the nozzle, an injection treatment chamber that houses the semiconductor element substrate held on the adsorption table and in the interior of which injection treatment is performed, a measurement mechanism that measures a warp of the semiconductor element substrate, and a control device that, based on a difference between a target warp amount and a warp amount measured by the measurement mechanism, performs at least either one of a setting processing of an injection treatment condition of the injection mechanism and an accept/reject determination of the semiconductor element substrate for which injection treatment has been performed.