Invention Application
US20150349085A1 METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH SIDEWALL SPACERS FOR CONFINING EPITAXIAL GROWTH
有权
用于制造具有边缘间隔的半导体器件用于限制外延生长的方法
- Patent Title: METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH SIDEWALL SPACERS FOR CONFINING EPITAXIAL GROWTH
- Patent Title (中): 用于制造具有边缘间隔的半导体器件用于限制外延生长的方法
-
Application No.: US14288766Application Date: 2014-05-28
-
Publication No.: US20150349085A1Publication Date: 2015-12-03
- Inventor: Qing LIU , Ruilong XIE , Xiuyu CAI , Chun-chen YEH
- Applicant: STMICROELECTRONICS, INC. , GLOBALFOUNDRIES Inc. , INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US TX Coppell KY Grand Cayman US NY Armonk
- Assignee: STMICROELECTRONICS, INC.,GLOBALFOUNDRIES Inc.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: STMICROELECTRONICS, INC.,GLOBALFOUNDRIES Inc.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US TX Coppell KY Grand Cayman US NY Armonk
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/165 ; H01L29/78
Abstract:
A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate. At least one dielectric layer is formed adjacent an end portion of the semiconductor fins and within the space between adjacent semiconductor fins. A pair of sidewall spacers is formed adjacent outermost semiconductor fins at the end portion of the semiconductor fins. The at least one dielectric layer and end portion of the semiconductor fins between the pair of sidewall spacers are removed. Source/drain regions are formed between the pair of sidewall spacers.
Public/Granted literature
- US09431540B2 Method for making a semiconductor device with sidewall spacers for confining epitaxial growth Public/Granted day:2016-08-30
Information query
IPC分类:
