Invention Application
- Patent Title: Method for Processing an Oxygen Containing Semiconductor Body
- Patent Title (中): 用于处理含氧半导体体的方法
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Application No.: US14473890Application Date: 2014-08-29
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Publication No.: US20160064206A1Publication Date: 2016-03-03
- Inventor: Hans-Joachim Schulze , Helmut Oefner
- Applicant: Infineon Technologies AG
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/66 ; H01L29/16 ; H01L29/36 ; H01L21/324 ; H01L21/265
Abstract:
A method for processing a semiconductor body is disclosed. In an embodiment, the method includes reducing an oxygen concentration in a silicon wafer in a first region adjoining a first surface of the silicon wafer by a first heat treatment, creating vacancies in a crystal lattice of the wafer at least in a second region adjoining the first region by implanting particles via the first surface into the wafer and forming oxygen precipitates in the second region by a second heat treatment.
Public/Granted literature
- US09312120B2 Method for processing an oxygen containing semiconductor body Public/Granted day:2016-04-12
Information query
IPC分类:
