Invention Application
- Patent Title: High-Voltage Normally-Off Field Effect Transistor With Channel Having Multiple Adjacent Sections
- Patent Title (中): 具有多个相邻截面的通道的高电压常关场效应晶体管
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Application No.: US14984408Application Date: 2015-12-30
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Publication No.: US20160111497A1Publication Date: 2016-04-21
- Inventor: Grigory Simin , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/40 ; H01L29/66 ; H01L29/78
Abstract:
A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.
Public/Granted literature
- US09748362B2 High-voltage normally-off field effect transistor with channel having multiple adjacent sections Public/Granted day:2017-08-29
Information query
IPC分类:
