Invention Application
- Patent Title: PHOTOVOLTAIC CELLS HAVING A BACK SIDE PASSIVATION LAYER
- Patent Title (中): 具有背面钝化层的光电池
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Application No.: US14785567Application Date: 2014-05-08
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Publication No.: US20160111558A1Publication Date: 2016-04-21
- Inventor: Wah Chung Wong , Hao Chen , Hua Gong , Annette Saenger , Dmitry Lekhtman
- Applicant: CIMA NANOTECH ISRAEL, LTD.
- International Application: PCT/IB14/61310 WO 20140508
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/18 ; H01L31/0224

Abstract:
A process for making a photovoltaic cell includes providing a semiconducting substrate having a back side passivation layer, and coating a self-assembling emulsion that includes glass frit particles onto the back side passivation layer. The emulsion is allowed to self-assemble into a network of traces that define cells. An electrode is formed over the network to create a precursor cell, which is then fired to cause the network to burn through the passivation layer and establish electrical contact between the semiconducting substrate and the electrode.
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