Invention Application
- Patent Title: DEFECT INSPECTING METHOD AND DEFECT INSPECTING APPARATUS
- Patent Title (中): 缺陷检查方法和缺陷检查装置
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Application No.: US14986824Application Date: 2016-01-04
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Publication No.: US20160116421A1Publication Date: 2016-04-28
- Inventor: Toshiyuki Nakao , Shigenobu Maruyama , Akira Hamamatsu , Yuta Urano
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2009-045857 20090227
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01N21/88

Abstract:
A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.
Public/Granted literature
- US09841384B2 Defect inspecting method and defect inspecting apparatus Public/Granted day:2017-12-12
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