Invention Application
US20160178705A1 METHOD OF USING A FIELD-EFFECT TRANSISTOR AS A CURRENT SENSING DEVICE
有权
使用场效应晶体管作为电流传感器件的方法
- Patent Title: METHOD OF USING A FIELD-EFFECT TRANSISTOR AS A CURRENT SENSING DEVICE
- Patent Title (中): 使用场效应晶体管作为电流传感器件的方法
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Application No.: US14705600Application Date: 2015-05-06
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Publication No.: US20160178705A1Publication Date: 2016-06-23
- Inventor: Gary L. Stirk , Karthik Kadirvel
- Applicant: Apple Inc.
- Main IPC: G01R31/36
- IPC: G01R31/36 ; H02J7/00

Abstract:
An apparatus may include one or more registers configured to store a plurality of values, and an analog-to-digital converter (ADC). Each value of the plurality of values may correspond to a characteristic of a transistor at a respective temperature value. The ADC may be configured to generate a digital value corresponding to a difference in voltage levels between a first terminal and a second terminal of the transistor. The apparatus may further include a sensor configured to measure a temperature, and control logic configured to generate a first voltage level at a control terminal of the transistor and receive the digital value from the ADC. The control logic may be further configured to determine, during a first operational mode, a current passing through the transistor dependent upon the digital value, at least one value of the plurality of values, and the temperature.
Public/Granted literature
- US09813063B2 Method of using a field-effect transistor as a current sensing device Public/Granted day:2017-11-07
Information query