Invention Application
- Patent Title: SEMICONDUCTOR OPTOELECTRONIC DEVICE WITH AN INSULATIVE PROTECTION LAYER AND THE MANUFACTURING METHOD THEREOF
- Patent Title (中): 具有绝缘保护层的半导体光电器件及其制造方法
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Application No.: US15079812Application Date: 2016-03-24
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Publication No.: US20160204316A1Publication Date: 2016-07-14
- Inventor: Chiu-Lin YAO , Chih-Chiang LU
- Applicant: Epistar Corporation
- Priority: TW098146164 20091230
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/64 ; H01L25/075 ; H01L33/62
Abstract:
The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; an insulative protection layer on the heat dispersion substrate, wherein the insulative protection layer comprises AlInGaN series material; and an optoelectronic unit comprising an epitaxial structure comprising multiple layers on the insulative protection layer, wherein at least one layer of the epitaxial structure comprises III-V group material devoid of nitride.
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