Invention Application
- Patent Title: HIGH-VOLTAGE TRANSISTOR DEVICE
- Patent Title (中): 高电压晶体管器件
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Application No.: US14658361Application Date: 2015-03-16
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Publication No.: US20160276428A1Publication Date: 2016-09-22
- Inventor: Juergen Faul , Peter Javorka
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H03K17/687 ; H01L21/762 ; H01L21/28 ; H01L29/78 ; H01L29/423
Abstract:
A semiconductor device is provided including a substrate, a buried oxide layer formed over the substrate, a semiconductor layer formed over the buried oxide layer, and a transistor device including a gate electrode, a gate insulation layer and a channel region, wherein the gate insulation layer comprises a part of the buried oxide layer.
Information query
IPC分类:
