Techniques herein include methods of processing photoresist patterns and photoresist materials for successful use in multi-patterning operations. Techniques include combinations of targeted deposition, curing, and trimming to provide a post-processed resist that effectively enables multi-patterning using photoresist materials to function as mandrels. Photoresist patterns and mandrels are hardened, strengthened, and/or dimensionally adjusted to provide desired dimensions and/or mandrels enabling straight sidewall spacers. Polymer is deposited with tapered profile to compensate for compressive stresses of various conformal or subsequent films to result in a vertical profile despite any compression.