A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 μm or less. A thickness of the aluminum nitride coating is no less than 10 μm. A film density of the aluminum nitride coating is no less than 90%. An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 μm×20 μm unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.