Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US15198785Application Date: 2016-06-30
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Publication No.: US20170005044A1Publication Date: 2017-01-05
- Inventor: Kiminori ISHIDO , Michiaki TAMAKAWA , Toshihiro IWASAKI
- Applicant: J-DEVICES CORPORATION
- Priority: JP2015-134137 20150703
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/56 ; H01L21/48 ; H01L23/31 ; H01L23/498
Abstract:
The present invention is to provide a semiconductor device in which an insulating material layer contains no reinforced fibers such as a glass cloth or a nonwoven cloth and which enables miniaturization of metal thin-film wiring layers, a reduction in the diameter of metal vias, and a reduction in interlayer thickness. The semiconductor device includes an insulating material layer including one or more semiconductor elements sealed with an insulating material containing no reinforced fibers, a plurality of metal thin-film wiring layers, metal vias that electrically connect the metal thin-film wiring layers together and electrodes of the semiconductor elements and the metal thin-film wiring layers together, and a warpage adjustment layer arranged on one principal surface of the insulating material layer to offset warpage of the insulating material layer to reduce warpage of the semiconductor device.
Public/Granted literature
- US10256196B2 Semiconductor device and method for manufacturing same Public/Granted day:2019-04-09
Information query
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