Invention Application
- Patent Title: ULTRA-LOW VOLTAGE TEMPERATURE THRESHOLD DETECTOR
- Patent Title (中): 超低电压温度检测器
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Application No.: US14788714Application Date: 2015-06-30
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Publication No.: US20170005641A1Publication Date: 2017-01-05
- Inventor: Amit Chhabra
- Applicant: STMicroelectronics International N.V.
- Main IPC: H03K3/011
- IPC: H03K3/011 ; H03K17/687 ; H01L27/11 ; G11C11/417

Abstract:
An integrated circuit die includes a plurality of transistors formed in a semiconductor substrate, the body regions of the transistors on a doped well region of the semiconductor substrate. A threshold detector selectively applies either a first voltage or second voltage to the doped well region based on whether the temperature of the semiconductor substrate is above or below a threshold temperature.
Public/Granted literature
- US09559665B2 Ultra-low voltage temperature threshold detector Public/Granted day:2017-01-31
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